PART |
Description |
Maker |
SCH2602 |
350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD Sanyo Semicon Device
|
UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING N-channel enhancement type MOS FET
|
NEC
|
FDS898407 FDS8984 |
N-Channel PowerTrench? MOSFET N-Channel PowerTrench庐 MOSFET N-Channel PowerTrench㈢ MOSFET N-Channel PowerTrench MOSFET 30V, 7A, 23mOhm 7 A, 30 V, 0.032 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp.
|
HI3-0508-5Z |
Single 16 and 8/Differential 8-Channel and 4-Channel CMOS Analog Multiplexers 8-CHANNEL, SGL ENDED MULTIPLEXER, PDIP16
|
Intersil, Corp.
|
AK4628 AK4628VQ |
2-channel 96KHz ADC 8-channel 192KHz DAC HIGH PERFORMANCE MULTI CHANNEL AUDIO CODEC
|
AKM[Asahi Kasei Microsystems]
|
MAX398CSEG55 |
Precision, 8-Channel/Dual 4-Channel, Low-Voltage, CMOS Analog Multiplexers 8-CHANNEL, SGL ENDED MULTIPLEXER, PDSO16
|
Maxim Integrated Products, Inc.
|
SIZ710DT-T1-GE3 |
N-Channel 20 V (D-S) MOSFETs 16 A, 20 V, 0.0068 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 6 X 3.73 MM, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAIR, 6 PIN
|
Vishay Siliconix Vishay Intertechnology, Inc.
|
2SJ325 2SJ325-Z-E2 2SJ325-Z-E2JM 2SJ325-Z-T1 2SJ32 |
P-channel enhancement type SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-252VAR
|
NEC Corp.
|
BA3506AF-DXT1 BA3420AL-DX BA3410AF-DXE1 BA5412-DX |
0.069 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO18 2 CHANNEL, AUDIO PREAMPLIFIER, PZIP18 1 CHANNEL, AUDIO PREAMPLIFIER, PDSO16 2 CHANNEL, AUDIO AMPLIFIER, PSIP12 PLL FREQUENCY SYNTHESIZER, 130 MHz, PDSO20 1 CHANNEL, AUDIO PREAMPLIFIER, PSIP7 5 W, 2 CHANNEL, AUDIO AMPLIFIER, PSIP12
|
|
2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
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